Porous Silicon Light Emitting Diode and Photodetector Integrated with Multilayer Alumina Waveguide

S.K. Lazarouk*, P.V. Jaguiro, A.A. Leshok, and V.E. Borisenko Belarusian State University Informatics and Radioelectronics, P.Browka 6, 220027, Minsk, Belarus
* e-mail: serg@cit.org.by

Visible light emitting diode and photodetector both made on porous silicon have been integrated with a multilayer alumina waveguide. In order to minimize optical losses, the waveguide has been designed to contain an inner layer with an increased refractory index. It was technologically realized by subsequent deposition of three aluminum layers among which the intermediate one was doped with titanium. This multilayer structure was then anodically oxidized to form Al2O3/Al2O3+TiO2/Al2O3 layered waveguide. In the integrated optoelectronic unit it provides up to 50 % increase of the detector response respect to the waveguide of pure Al2O3. Optical losses in the visible range have been estimated to be about 1 dB/cm.